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Monday, July 03, 2023

BBCube 3D: A Breakthrough in Semiconductor Integration, Data Transmission

BBCube 3D: A Breakthrough in Semiconductor Integration, Data Transmission

Tokyo Tech News (Japan)

June 29, 2023

The Bumpless Build Cube 3D (BBCube3D) technology designed by scientists at Japan's Tokyo Institute of Technology (Tokyo Tech) and tech developer Hitachi could potentially improve the three-dimensional integration of processing units (PUs) and memory chips. The researchers facilitated 3D connectivity between PUs and dynamic random access memory (DRAM) by stacking PU dies atop multiple DRAM layers interconnected by through-silicon vias (TSVs). BBCube 3D owes its improved electrical performance to low parasitic capacitance and resistance to the TSVs, overall compactness, and the absence of solder microbumps. Tokyo Tech's Takayuki Ohba said the technology "has the potential to achieve a bandwidth of 1.6 terabytes per second, which is 30 times higher than DDR5 [Double Data Rate 5 Synchronous DRAM] and four times higher than HBM2E [High Bandwidth Memory 2E]."

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