How far we have come.
HOW THE FIRST TRANSISTOR WORKED
Even its inventors didn’t fully understand the point-contact transistor
By GLENN ZORPETTE in Spectrum.ieee 20 NOV 2022 12 MIN READ
A photo of an outstretched hand with several transistors in the palm of it.
A 1955 AT&T publicity photo shows [in palm, from left] a phototransistor, a junction transistor, and a point-contact transistor. AT&T ARCHIVES AND HISTORY CENTER
THE VACUUM-TUBE TRIODE wasn’t quite 20 years old when physicists began trying to create its successor, and the stakes were huge. Not only had the triode made long-distance telephony and movie sound possible, it was driving the entire enterprise of commercial radio, an industry worth more than a billion dollars in 1929. But vacuum tubes were power-hungry and fragile. If a more rugged, reliable, and efficient alternative to the triode could be found, the rewards would be immense.
The goal was a three-terminal device made out of semiconductors that would accept a low-current signal into an input terminal and use it to control the flow of a larger current flowing between two other terminals, thereby amplifying the original signal. The underlying principle of such a device would be something called the field effect—the ability of electric fields to modulate the electrical conductivity of semiconductor materials. The field effect was already well known in those days, thanks to diodes and related research on semiconductors.
A photo of a cutaway of a point-contact of a transistor. In the cutaway photo of a point-contact, two thin conductors are visible; these connect to the points that make contact with a tiny slab of germanium. One of these points is the emitter and the other is the collector. A third contact, the base, is attached to the reverse side of the germanium.AT&T ARCHIVES AND HISTORY CENTER
But building such a device had proved an insurmountable challenge to some of the world’s top physicists for more than two decades. Patents for transistor-like devices had been filed starting in 1925, but the first recorded instance of a working transistor was the legendary point-contact device built at AT&T Bell Telephone Laboratories in the fall of 1947.
Though the point-contact transistor was the most important invention of the 20th century, there exists, surprisingly, no clear, complete, and authoritative account of how the thing actually worked. Modern, more robust junction and planar transistors rely on the physics in the bulk of a semiconductor, rather than the surface effects exploited in the first transistor. And relatively little attention has been paid to this gap in scholarship.
It was an ungainly looking assemblage of germanium, plastic, and gold foil, all topped by a squiggly spring. Its inventors were a soft-spoken Midwestern theoretician, John Bardeen, and a voluble and “ somewhat volatile” experimentalist, Walter Brattain. Both were working under William Shockley, a relationship that would later prove contentious. In November 1947, Bardeen and Brattain were stymied by a simple problem. In the germanium semiconductor they were using, a surface layer of electrons seemed to be blocking an applied electric field, preventing it from penetrating the semiconductor and modulating the flow of current. No modulation, no signal amplification.
Sometime late in 1947 they hit on a solution. It featured two pieces of barely separated gold foil gently pushed by that squiggly spring into the surface of a small slab of germanium.
Textbooks and popular accounts alike tend to ignore the mechanism of the point-contact transistor in favor of explaining how its more recent descendants operate. Indeed, the current edition of that bible of undergraduate EEs, The Art of Electronics by Horowitz and Hill, makes no mention of the point-contact transistor at all, glossing over its existence by erroneously stating that the junction transistor was a “Nobel Prize-winning invention in 1947.” But the transistor that was invented in 1947 was the point-contact; the junction transistor was invented by Shockley in 1948.
So it seems appropriate somehow that the most comprehensive explanation of the point-contact transistor is contained within John Bardeen’s lecture for that Nobel Prize, in 1956. Even so, reading it gives you the sense that a few fine details probably eluded even the inventors themselves. “A lot of people were confused by the point-contact transistor,” says Thomas Misa, former director of the Charles Babbage Institute for the History of Science and Technology, at the University of Minnesota.
Textbooks and popular accounts alike tend to ignore the mechanism of the point-contact transistor in favor of explaining how its more recent descendants operate.
A year after Bardeen’s lecture, R. D. Middlebrook, a professor of electrical engineering at Caltech who would go on to do pioneering work in power electronics, wrote: “Because of the three-dimensional nature of the device, theoretical analysis is difficult and the internal operation is, in fact, not yet completely understood.”
Nevertheless, and with the benefit of 75 years of semiconductor theory, here we go. The point-contact transistor was built around a thumb-size slab of n-type germanium, which has an excess of negatively charged electrons. This slab was treated to produce a very thin surface layer that was p-type, meaning it had an excess of positive charges. These positive charges are known as holes. They are actually localized deficiencies of electrons that move among the atoms of the semiconductor very much as a real particle would. An electrically grounded electrode was attached to the bottom of this slab, creating the base of the transistor. The two strips of gold foil touching the surface formed two more electrodes, known as the emitter and the collector. ... '
