In CWorld: " ... IBM and development partner Samsung announced they've developed a process to manufacture a type of non-volatile RAM that is up to 100,000 times faster than NAND flash and never wears out.
The two companies collaborated to develop next-generation magnetoresistive RAM (MRAM) using spin-transfer torque (STT) technology, which would lead to low-capacity memory chips for Internet of Things sensors, wearables and mobile devices that currently use NAND flash to store data. ... "
Subscribe to:
Post Comments (Atom)
No comments:
Post a Comment