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Sunday, September 04, 2016

New Memory For Wearables, IoT

In CWorld:  " ...  IBM and development partner Samsung announced they've developed a process to manufacture a type of non-volatile RAM that is up to 100,000 times faster than NAND flash and never wears out.

The two companies collaborated to develop next-generation magnetoresistive RAM (MRAM) using spin-transfer torque (STT) technology, which would lead to low-capacity memory chips for Internet of Things sensors, wearables and mobile devices that currently use NAND flash to store data.  ... " 

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